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1N646908 20030 256160 TC144E MIWI06 DSP56 NJU6446 256160
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 Excelics
DATA SHEET
* * * * * * * NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
EPA018A-70
High Efficiency Heterojunction Power FET
20 D 44 19 4
180 Min. (All Leads)
S
S
40
G
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE NF Ga Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=6V, Ids=50% Idss Gain at 1dB Compression Vds=6V, Ids=50% Idss Power Added Efficiency at 1dB Compression Vds=6V, Ids=50% Idss Noise Figure Vds=2V, Ids=15mA Associated Gain Vds=2V, Ids=15mA Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0mA -9 -6 f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz f=12GHz f=12GHz 30 35 MIN 18.5 11.0 TYP 20.0 20.0 13.5 11.0 45 0.75 12.5 55 60 -1.0 -15 -14 480*
o
MAX
UNIT dBm dB % dB dB
80
mA mS
-2.5
V V V C/W
Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 10V 6V Vgs Gate-Source Voltage -6V -3V Ids Drain Current Idss 40mA Igsf Forward Gate Current 9mA 1.5mA Pin Input Power 16dBm @ 3dB Compression o Tch Channel Temperature 175 C 150 oC o Tstg Storage Temperature -65/175 C -65/150 oC Pt Total Power Dissipation 285mW 240mW Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
70
EPA018A-70
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.984 -19.0 0.950 -38.2 0.906 -56.4 0.863 -74.0 0.813 -90.7 0.764 -105.0 0.715 -120.3 0.663 -134.7 0.614 -157.7 0.587 -179.9 0.561 168.8 0.539 153.6 0.573 127.2 0.611 104.9 0.613 90.9 0.620 74.4 0.640 58.9 0.692 49.7 0.691 32.0 0.731 16.7 0.783 7.8 0.771 -2.6 0.752 -20.8 0.776 -37.7 0.756 -48.6 0.742 -62.4 6V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 5.081 162.1 0.014 75.9 4.859 144.2 0.026 63.4 4.547 127.3 0.035 51.4 4.348 111.9 0.041 42.1 4.195 97.2 0.047 32.9 3.973 82.9 0.049 24.2 3.746 68.8 0.050 15.3 3.572 55.9 0.046 6.9 3.501 41.4 0.044 5.6 3.388 26.4 0.044 2.1 3.307 13.4 0.044 0.2 3.248 0.0 0.045 2.0 3.097 -15.8 0.049 -0.6 2.873 -31.1 0.050 -6.1 2.805 -46.4 0.055 -13.0 2.730 -62.7 0.059 -20.7 2.432 -76.4 0.056 -20.7 2.365 -87.1 0.075 -32.3 2.236 -104.4 0.064 -49.1 2.163 -120.6 0.064 -59.8 2.061 -134.9 0.065 -70.3 1.923 -148.7 0.062 -85.6 1.800 -166.5 0.058 -103.2 1.693 174.8 0.054 -123.0 1.690 160.0 0.055 -139.5 1.710 144.5 0.060 -154.9 --- S22 --MAG ANG 0.813 -11.1 0.789 -23.7 0.766 -35.3 0.745 -44.6 0.713 -53.3 0.675 -64.4 0.649 -74.6 0.612 -82.6 0.605 -87.5 0.585 -97.0 0.562 -110.8 0.551 -122.8 0.527 -131.9 0.510 -143.2 0.513 -162.9 0.503 178.0 0.463 169.1 0.522 157.0 0.540 133.7 0.591 117.3 0.578 106.6 0.592 95.6 0.592 76.9 0.584 59.7 0.568 45.9 0.555 33.7


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